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International Conference on Silicon Carbide and Related Materials 2013

Sunday September 29, 2013 to Friday October 4, 2013
Miyazaki City, Japan

Event Type: Conference

Subject(s): Analytical Chemistry, Physical Chemistry, Materials Science, Theoretical Chemistry, Chemical Engineering


Event Description

Topics will include: Fundamentals (Theoretical and Experimental) Bulk and Epitaxial Growth Material Characterization Surfaces and Interfaces Device Fabrication Processes Devices (Power switching, RF power, High temperature, Radiation-resistant devices, etc.) Device Physics (Measurement, Modeling, Simulation, and Reliability) Packaging, Modular, and Circuit Technology System Application: for wide bandgap semiconductors such as SiC, Ill-nitrides, and their related materials such as graphene.

Venue Information

Venue: Phoenix Seagaia Resort
3083 Hamayama, Miyazaki City, Japan, 880-8545



Organizer Information

Organizing Group: Semiconductor Analysis and Radiation Effects Group, Japan Atomic Energy Agency

Organizer: Mr. H. Okumura

Address: Semiconductor Analysis and Radiation Effects Group, Japan Atomic Energy Agency , Semiconductor Analysis and Radiation Effects Group, Japan Atomic Energy Agency , Takasaki,Gunma , Japan, 880-8545

Phone: +81-27-346-9320


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